Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high- power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density...

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Bibliographic Details
Published in:IEEE electron device letters 2007-06, Vol.28 (6), p.476-478
Main Authors: Jin-Yu Shiu, Jui-Chien Huang, Desmaris, V., Chia-Ta Chang, Chung-Yu Lu, Kumakura, K., Makimoto, T., Zirath, H., Rorsman, N., Chang, E.Y.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Applied sciences
Density
Electronics
Exact sciences and technology
Gallium nitride
Gallium nitrides
GaN
Gate leakage
Gates
HEMTs
High electron mobility transistors
high electron mobility transistors (HEMTs)
implantation
Ion implantation
Laboratories
Materials science and technology
Microelectronic fabrication (materials and surfaces technology)
Microwaves
MODFETs
Oxygen
power density
pulsed I - V
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
transient
Transistors
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Summary:A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high- power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V gs = -4 V and V ds = 50 V and a maximum power added efficiency of 51.5% at V gs = -4 V and V ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.896904