Temperature performance of sub-1V ultra-low power current sources

This paper presents the temperature performance of two self-biased current sources. We have employed a simple topology to design 4nA and 900pA current references implemented in both 0.35μm and 0.18μm technologies, respectively. Experimental results showed that the current source implemented in 0.35μ...

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Bibliographic Details
Main Authors: Camacho-Galeano, E. M., Moreira, J. Q., Pereira, M. D., Cardoso, A. J., Galup-Montoro, C., Schneider, M. C.
Format: Conference Proceeding
Language:English
Subjects:
Analog circuits
CMOS analog integrated circuits
CMOS technology
Energy consumption
Low voltage
MOSFET circuits
Performance analysis
Semiconductor device modeling
Temperature
Topology
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Summary:This paper presents the temperature performance of two self-biased current sources. We have employed a simple topology to design 4nA and 900pA current references implemented in both 0.35μm and 0.18μm technologies, respectively. Experimental results showed that the current source implemented in 0.35μm technology can operate at a supply voltage as low as 1V and at 650mV in 0.18μm CMOS technology. The temperature performance of the current source is analyzed in this paper. The association of a very simple topology, an efficient design procedure, low voltage cascode transistor and low output conductance trapezoidal transistors has resulted in small area, ultra low power consumption and a line regulation better than 0.2%/V of supply voltage.
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2008.4541896