Carbon Containing Platelets in Silicon and Oriented Diamond Growth

We analyse be means of transmision electron microscopy techniques the processes during the initial stages of diamond growth by magnetron sputtering. We show that a comparatively high density of C is found as deep as 100 nm in the Si substrate. The carbon arranges in planar defects in {111} and in {0...

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Bibliographic Details
Published in:Crystal research and technology (1979) 2000-07, Vol.35 (6-7), p.899-906
Main Authors: Albrecht, M., Aldabergenova, S.B., Baiganatova, Sh.B., Frank, G., Taurbaev, T.I., Christiansen, S., Strunk, H.P.
Format: Article
Language:English
Subjects:
carbon
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
diamond
Electron, ion, and scanning probe microscopy
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
platelets
Structure of solids and liquids
crystallography
Theory and models of film growth
Transmission, reflection and scanning electron microscopy(including ebic)
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Summary:We analyse be means of transmision electron microscopy techniques the processes during the initial stages of diamond growth by magnetron sputtering. We show that a comparatively high density of C is found as deep as 100 nm in the Si substrate. The carbon arranges in planar defects in {111} and in {001} lattice planes. Our analysis shows that these defects can best be described by coherently strained inclusions that resemble hexagonal SiC platelets. These can act as seeds for orientated growth of diamond on Si.
ISSN:0232-1300
1521-4079
DOI:10.1002/1521-4079(200007)35:6/7<899::AID-CRAT899>3.0.CO;2-C