Debye temperature and melting point of ternary chalcopyrite semiconductors

Debye temperature ( θ D ) and melting point ( T m ) of A IB IIIC 2 V I and A IIB IVC 2 V chalcopyrite semiconductors have been discussed. Four simple relations have been proposed to calculate the values of θ D . Two are based on plasmon energy data and one each on T m and molecular weight ( W ). We...

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Bibliographic Details
Published in:Solid state communications 2009-07, Vol.149 (25), p.1008-1011
Main Authors: Kumar, V., Shrivastava, A.K., Banerji, Rajib, Dhirhe, D.
Format: Article
Language:English
Subjects:
A. Ternary chalcopyrite semiconductors
A. Tetrahedral semiconductors
Condensed matter: structure, mechanical and thermal properties
D. Debye temperature
D. Melting temperature
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Physics
Solid-liquid transitions
Specific phase transitions
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Summary:Debye temperature ( θ D ) and melting point ( T m ) of A IB IIIC 2 V I and A IIB IVC 2 V chalcopyrite semiconductors have been discussed. Four simple relations have been proposed to calculate the values of θ D . Two are based on plasmon energy data and one each on T m and molecular weight ( W ). We have also proposed two simple relations to calculate T m of these semiconductors. One is based on plasmon energy and the other on W. The calculated values of θ D and T m from all equations are compared with the experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them.
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2009.04.003