SAW devices based on ZnO inclined c-axis on diamond

• Published in: Diamond and related materials 2008-07, Vol.17 (7), p.1420-1423
• Main Authors: Bensmaine, S., Le Brizoual, L., Elmazria, O., Fundenberger, J.J., Belmahi, M., Benyoucef, B.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Device modeling; Diamond film; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Specific materials; Surface acoustic wave device; Theory and models of film growth
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2008.02.022

A thin zinc oxide (ZnO) films with inclined c-axis are deposited on the nucleation side of self-standing diamond substrates with. r.f. magnetron sputtering and a zinc-oxide target. The films are characterized by X-ray diffraction (XRD) with a χ-scan analysis. We have measured a c-axis angle of inclination of 45° in the case of ZnO/Diamond structure. The velocity and the electromechanical coupling coefficient is theoretically determined by the effective piezoelectric permittivity method for three angles of inclination (0°, 45°, 90°). Several SAW devices were developed on the ZnO(45°)/diamond structure.