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Full process for integrating silicon nanowire arrays into solar cells

A novel process was developed for integrating silicon nanowire arrays into solar cells. n-Type silicon nanowires were grown by chemical-vapour deposition via the gold-catalysed vapour–liquid–solid method, on a p-type silicon substrate. After the growth, the nanowire array was planarized, by embeddin...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2009-09, Vol.93 (9), p.1568-1571
Main Authors: Perraud, Simon, Poncet, Séverine, Noël, Sébastien, Levis, Michel, Faucherand, Pascal, Rouvière, Emmanuelle, Thony, Philippe, Jaussaud, Claude, Delsol, Régis
Format: Article
Language:English
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Summary:A novel process was developed for integrating silicon nanowire arrays into solar cells. n-Type silicon nanowires were grown by chemical-vapour deposition via the gold-catalysed vapour–liquid–solid method, on a p-type silicon substrate. After the growth, the nanowire array was planarized, by embedding the nanowires in a spin-on glass matrix and subsequent chemical–mechanical polishing of the front surface. This planarization step allows to deposit a continuous and uniform conductive film on top of the nanowire array, and thus to form a high-quality front electrical contact. For an illumination intensity of 100 mW/cm 2, our devices exhibit an energy conversion efficiency of 1.9%. The main performance limiting factor is a high pn junction reverse current, due to contamination by the growth catalyst or to a lack of passivation of surface electronic defects.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2009.04.009