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Full process for integrating silicon nanowire arrays into solar cells
A novel process was developed for integrating silicon nanowire arrays into solar cells. n-Type silicon nanowires were grown by chemical-vapour deposition via the gold-catalysed vapour–liquid–solid method, on a p-type silicon substrate. After the growth, the nanowire array was planarized, by embeddin...
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Published in: | Solar energy materials and solar cells 2009-09, Vol.93 (9), p.1568-1571 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A novel process was developed for integrating silicon nanowire arrays into solar cells. n-Type silicon nanowires were grown by chemical-vapour deposition via the gold-catalysed vapour–liquid–solid method, on a p-type silicon substrate. After the growth, the nanowire array was planarized, by embedding the nanowires in a spin-on glass matrix and subsequent chemical–mechanical polishing of the front surface. This planarization step allows to deposit a continuous and uniform conductive film on top of the nanowire array, and thus to form a high-quality front electrical contact. For an illumination intensity of 100
mW/cm
2, our devices exhibit an energy conversion efficiency of 1.9%. The main performance limiting factor is a high pn junction reverse current, due to contamination by the growth catalyst or to a lack of passivation of surface electronic defects. |
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ISSN: | 0927-0248 1879-3398 |
DOI: | 10.1016/j.solmat.2009.04.009 |