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Liquid Phase Epitaxial Growth of Silicon on Porous Silicon for Photovoltaic Applications
The aim of this experiment is to grow a thin silicon layer (
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| Published in: | Crystal research and technology (1979) 2001-10, Vol.36 (8-10), p.1005-1010 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c4155-69b90149f363a6e34da6fcf657e543444cc1701d7ad871547344e33de2edd79f3 |
| container_end_page | 1010 |
| container_issue | 8-10 |
| container_start_page | 1005 |
| container_title | Crystal research and technology (1979) |
| container_volume | 36 |
| creator | Berger, S. Quoizola, S. Fave, A. Ouldabbes, A. Kaminski, A. Perichon, S. Chabane-Sari, N-E. Barbier, D. Laugier, A. |
| description | The aim of this experiment is to grow a thin silicon layer ( |
| doi_str_mv | 10.1002/1521-4079(200110)36:8/10<1005::AID-CRAT1005>3.0.CO;2-S |
| format | article |
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This one acts as a sacrificial layer in order to transfer the 50 μm epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re‐usable. In this work, we used the following procedure : the porous silicon formation by HF anodisation on (100) or (111) Si wafers is realised in first step, followed by an eventual annealing in H2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p‐Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p‐Si (111) oriented wafer, homogeneous layers were obtained.</description><identifier>ISSN: 0232-1300</identifier><identifier>EISSN: 1521-4079</identifier><identifier>DOI: 10.1002/1521-4079(200110)36:8/10<1005::AID-CRAT1005>3.0.CO;2-S</identifier><identifier>CODEN: CRTEDF</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag Berlin GmbH</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) ; LPE ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; photovoltaic applications ; Physics ; porous silicon ; SEM</subject><ispartof>Crystal research and technology (1979), 2001-10, Vol.36 (8-10), p.1005-1010</ispartof><rights>2001 WILEY‐VCH Verlag Berlin GmbH, Fed. Rep. of Germany</rights><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c4155-69b90149f363a6e34da6fcf657e543444cc1701d7ad871547344e33de2edd79f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14065159$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Berger, S.</creatorcontrib><creatorcontrib>Quoizola, S.</creatorcontrib><creatorcontrib>Fave, A.</creatorcontrib><creatorcontrib>Ouldabbes, A.</creatorcontrib><creatorcontrib>Kaminski, A.</creatorcontrib><creatorcontrib>Perichon, S.</creatorcontrib><creatorcontrib>Chabane-Sari, N-E.</creatorcontrib><creatorcontrib>Barbier, D.</creatorcontrib><creatorcontrib>Laugier, A.</creatorcontrib><title>Liquid Phase Epitaxial Growth of Silicon on Porous Silicon for Photovoltaic Applications</title><title>Crystal research and technology (1979)</title><addtitle>Cryst. Res. Technol</addtitle><description>The aim of this experiment is to grow a thin silicon layer (<50μm) by Liquid Phase Epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 μm epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re‐usable. In this work, we used the following procedure : the porous silicon formation by HF anodisation on (100) or (111) Si wafers is realised in first step, followed by an eventual annealing in H2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p‐Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p‐Si (111) oriented wafer, homogeneous layers were obtained.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</subject><subject>LPE</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>photovoltaic applications</subject><subject>Physics</subject><subject>porous silicon</subject><subject>SEM</subject><issn>0232-1300</issn><issn>1521-4079</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqVUFtv0zAUthBIlMF_yAsIHtIdX9MUNKmEUSYVWtFxETwcGcfRPLI6s1O2_XtcpZQnHpAsHfm7naOPkBMKYwrAjqlkNBdQlM8ZAKXwgqvp5JjCq8TK6XR29iavPs7Od78TPoZxtXzJ8vU9MjoY75MRMM5yygEekkcxXgJAqQQbka8Ld711dba60NFmp53r9a3TbTYP_qa_yHyTrV3rjN9k6a188Nt4QBofks_3_pdve-1MNuu6xOje-U18TB40uo32yX4ekU9vT8-rd_liOT-rZovcCCplrsofJVBRNlxxrSwXtVaNaZQsrBRcCGEMLYDWha4nBZWiSJjlvLbM1nWRbEfk2ZDbBX-9tbHHKxeNbVu9selY5EIBUwyS8PMgNMHHGGyDXXBXOtwhBdwVjbu-cNcXDkUjVzjZsxIxFY1_ikaOgNUSGa5T8NP9BToa3TZBb4yLf9MFKEllmXTfB92Na-3df27_x_IDltLzId3F3t4e0nX4iarghcQvH-Y4WbwXq2-vAQX_DQvjrAU</recordid><startdate>200110</startdate><enddate>200110</enddate><creator>Berger, S.</creator><creator>Quoizola, S.</creator><creator>Fave, A.</creator><creator>Ouldabbes, A.</creator><creator>Kaminski, A.</creator><creator>Perichon, S.</creator><creator>Chabane-Sari, N-E.</creator><creator>Barbier, D.</creator><creator>Laugier, A.</creator><general>WILEY-VCH Verlag Berlin GmbH</general><general>WILEY‐VCH Verlag Berlin GmbH</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>200110</creationdate><title>Liquid Phase Epitaxial Growth of Silicon on Porous Silicon for Photovoltaic Applications</title><author>Berger, S. ; Quoizola, S. ; Fave, A. ; Ouldabbes, A. ; Kaminski, A. ; Perichon, S. ; Chabane-Sari, N-E. ; Barbier, D. ; Laugier, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4155-69b90149f363a6e34da6fcf657e543444cc1701d7ad871547344e33de2edd79f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</topic><topic>LPE</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>photovoltaic applications</topic><topic>Physics</topic><topic>porous silicon</topic><topic>SEM</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Berger, S.</creatorcontrib><creatorcontrib>Quoizola, S.</creatorcontrib><creatorcontrib>Fave, A.</creatorcontrib><creatorcontrib>Ouldabbes, A.</creatorcontrib><creatorcontrib>Kaminski, A.</creatorcontrib><creatorcontrib>Perichon, S.</creatorcontrib><creatorcontrib>Chabane-Sari, N-E.</creatorcontrib><creatorcontrib>Barbier, D.</creatorcontrib><creatorcontrib>Laugier, A.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Crystal research and technology (1979)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Berger, S.</au><au>Quoizola, S.</au><au>Fave, A.</au><au>Ouldabbes, A.</au><au>Kaminski, A.</au><au>Perichon, S.</au><au>Chabane-Sari, N-E.</au><au>Barbier, D.</au><au>Laugier, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Liquid Phase Epitaxial Growth of Silicon on Porous Silicon for Photovoltaic Applications</atitle><jtitle>Crystal research and technology (1979)</jtitle><addtitle>Cryst. Res. Technol</addtitle><date>2001-10</date><risdate>2001</risdate><volume>36</volume><issue>8-10</issue><spage>1005</spage><epage>1010</epage><pages>1005-1010</pages><issn>0232-1300</issn><eissn>1521-4079</eissn><coden>CRTEDF</coden><abstract>The aim of this experiment is to grow a thin silicon layer (<50μm) by Liquid Phase Epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 μm epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re‐usable. In this work, we used the following procedure : the porous silicon formation by HF anodisation on (100) or (111) Si wafers is realised in first step, followed by an eventual annealing in H2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p‐Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p‐Si (111) oriented wafer, homogeneous layers were obtained.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag Berlin GmbH</pub><doi>10.1002/1521-4079(200110)36:8/10<1005::AID-CRAT1005>3.0.CO;2-S</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0232-1300 |
| ispartof | Crystal research and technology (1979), 2001-10, Vol.36 (8-10), p.1005-1010 |
| issn | 0232-1300 1521-4079 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_34602620 |
| source | Wiley-Blackwell Read & Publish Collection |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) LPE Materials science Methods of deposition of films and coatings film growth and epitaxy photovoltaic applications Physics porous silicon SEM |
| title | Liquid Phase Epitaxial Growth of Silicon on Porous Silicon for Photovoltaic Applications |
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