Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining

Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorp...

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Bibliographic Details
Published in:Precision engineering 2009-10, Vol.33 (4), p.378-386
Main Authors: Yan, Jiwang, Asami, Tooru, Harada, Hirofumi, Kuriyagawa, Tsunemoto
Format: Article
Language:English
Subjects:
Applied sciences
Dislocation
Ductile machining
Exact sciences and technology
High pressure
Mechanical engineering. Machine design
Nano precision cutting
Phase transformation
Precision engineering, watch making
Single crystal silicon
Subsurface damage
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Summary:Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. The machining pressure was estimated from the micro-cutting forces, and a subsurface damage model was proposed by considering the phase transformation and dislocation behavior of silicon under high-pressure conditions.
ISSN:0141-6359
1873-2372
DOI:10.1016/j.precisioneng.2008.10.008