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Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining

Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorp...

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Published in:Precision engineering 2009-10, Vol.33 (4), p.378-386
Main Authors: Yan, Jiwang, Asami, Tooru, Harada, Hirofumi, Kuriyagawa, Tsunemoto
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Language:English
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cited_by cdi_FETCH-LOGICAL-c414t-77b30786baa5b94f5e4aaf295658ef0cf45b62c14a4d9d867b21c71169c337b83
cites cdi_FETCH-LOGICAL-c414t-77b30786baa5b94f5e4aaf295658ef0cf45b62c14a4d9d867b21c71169c337b83
container_end_page 386
container_issue 4
container_start_page 378
container_title Precision engineering
container_volume 33
creator Yan, Jiwang
Asami, Tooru
Harada, Hirofumi
Kuriyagawa, Tsunemoto
description Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. The machining pressure was estimated from the micro-cutting forces, and a subsurface damage model was proposed by considering the phase transformation and dislocation behavior of silicon under high-pressure conditions.
doi_str_mv 10.1016/j.precisioneng.2008.10.008
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_34749509</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0141635908001530</els_id><sourcerecordid>34749509</sourcerecordid><originalsourceid>FETCH-LOGICAL-c414t-77b30786baa5b94f5e4aaf295658ef0cf45b62c14a4d9d867b21c71169c337b83</originalsourceid><addsrcrecordid>eNqNkEFr3DAQhUVoIds0_0EEkpu3kixbdm4hzaaFQC_tWYzl0UaLLW8kO7D_PrNsCD3m9EDzvTeax9iVFGspZP1jt94ndCGHKWLcrpUQDQ3WJGdsJRtTFqo06gtbCallUZdVe86-5bwTQphG6BV73iyxhxHjDAMP8RXzHLYwUx6fPM9Ll5fkwSEnCLZICM8hbgfkLh0ymYYQkZ6G4MjiYMnY8-7A-wDjFHs-gnsOkRzf2VcPQ8bLd71g_zYPf-9_FU9_Hn_f3z0VTks9F8Z0JX2t7gCqrtW-Qg3gVVvVVYNeOK-rrlZOatB92ze16ZR0Rsq6dWVpuqa8YDen3H2aXhY6x44hOxwGiDgt2Zba6LYSLYG3J9ClKeeE3u5TGCEdrBT2WK7d2f_LtcdyjzMSMl-_b4HsYPAJIoEfCUo2UiiliPt54pBOfg2YbHYBo8M-UPRs-yl8Zt0blBGZOA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34749509</pqid></control><display><type>article</type><title>Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining</title><source>ScienceDirect Freedom Collection</source><creator>Yan, Jiwang ; Asami, Tooru ; Harada, Hirofumi ; Kuriyagawa, Tsunemoto</creator><creatorcontrib>Yan, Jiwang ; Asami, Tooru ; Harada, Hirofumi ; Kuriyagawa, Tsunemoto</creatorcontrib><description>Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. The machining pressure was estimated from the micro-cutting forces, and a subsurface damage model was proposed by considering the phase transformation and dislocation behavior of silicon under high-pressure conditions.</description><identifier>ISSN: 0141-6359</identifier><identifier>EISSN: 1873-2372</identifier><identifier>DOI: 10.1016/j.precisioneng.2008.10.008</identifier><identifier>CODEN: PREGDL</identifier><language>eng</language><publisher>New York, NY: Elsevier Inc</publisher><subject>Applied sciences ; Dislocation ; Ductile machining ; Exact sciences and technology ; High pressure ; Mechanical engineering. Machine design ; Nano precision cutting ; Phase transformation ; Precision engineering, watch making ; Single crystal silicon ; Subsurface damage</subject><ispartof>Precision engineering, 2009-10, Vol.33 (4), p.378-386</ispartof><rights>2008 Elsevier Inc.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c414t-77b30786baa5b94f5e4aaf295658ef0cf45b62c14a4d9d867b21c71169c337b83</citedby><cites>FETCH-LOGICAL-c414t-77b30786baa5b94f5e4aaf295658ef0cf45b62c14a4d9d867b21c71169c337b83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=21810222$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yan, Jiwang</creatorcontrib><creatorcontrib>Asami, Tooru</creatorcontrib><creatorcontrib>Harada, Hirofumi</creatorcontrib><creatorcontrib>Kuriyagawa, Tsunemoto</creatorcontrib><title>Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining</title><title>Precision engineering</title><description>Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. The machining pressure was estimated from the micro-cutting forces, and a subsurface damage model was proposed by considering the phase transformation and dislocation behavior of silicon under high-pressure conditions.</description><subject>Applied sciences</subject><subject>Dislocation</subject><subject>Ductile machining</subject><subject>Exact sciences and technology</subject><subject>High pressure</subject><subject>Mechanical engineering. Machine design</subject><subject>Nano precision cutting</subject><subject>Phase transformation</subject><subject>Precision engineering, watch making</subject><subject>Single crystal silicon</subject><subject>Subsurface damage</subject><issn>0141-6359</issn><issn>1873-2372</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNkEFr3DAQhUVoIds0_0EEkpu3kixbdm4hzaaFQC_tWYzl0UaLLW8kO7D_PrNsCD3m9EDzvTeax9iVFGspZP1jt94ndCGHKWLcrpUQDQ3WJGdsJRtTFqo06gtbCallUZdVe86-5bwTQphG6BV73iyxhxHjDAMP8RXzHLYwUx6fPM9Ll5fkwSEnCLZICM8hbgfkLh0ymYYQkZ6G4MjiYMnY8-7A-wDjFHs-gnsOkRzf2VcPQ8bLd71g_zYPf-9_FU9_Hn_f3z0VTks9F8Z0JX2t7gCqrtW-Qg3gVVvVVYNeOK-rrlZOatB92ze16ZR0Rsq6dWVpuqa8YDen3H2aXhY6x44hOxwGiDgt2Zba6LYSLYG3J9ClKeeE3u5TGCEdrBT2WK7d2f_LtcdyjzMSMl-_b4HsYPAJIoEfCUo2UiiliPt54pBOfg2YbHYBo8M-UPRs-yl8Zt0blBGZOA</recordid><startdate>20091001</startdate><enddate>20091001</enddate><creator>Yan, Jiwang</creator><creator>Asami, Tooru</creator><creator>Harada, Hirofumi</creator><creator>Kuriyagawa, Tsunemoto</creator><general>Elsevier Inc</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope></search><sort><creationdate>20091001</creationdate><title>Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining</title><author>Yan, Jiwang ; Asami, Tooru ; Harada, Hirofumi ; Kuriyagawa, Tsunemoto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c414t-77b30786baa5b94f5e4aaf295658ef0cf45b62c14a4d9d867b21c71169c337b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Dislocation</topic><topic>Ductile machining</topic><topic>Exact sciences and technology</topic><topic>High pressure</topic><topic>Mechanical engineering. Machine design</topic><topic>Nano precision cutting</topic><topic>Phase transformation</topic><topic>Precision engineering, watch making</topic><topic>Single crystal silicon</topic><topic>Subsurface damage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yan, Jiwang</creatorcontrib><creatorcontrib>Asami, Tooru</creatorcontrib><creatorcontrib>Harada, Hirofumi</creatorcontrib><creatorcontrib>Kuriyagawa, Tsunemoto</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><jtitle>Precision engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yan, Jiwang</au><au>Asami, Tooru</au><au>Harada, Hirofumi</au><au>Kuriyagawa, Tsunemoto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining</atitle><jtitle>Precision engineering</jtitle><date>2009-10-01</date><risdate>2009</risdate><volume>33</volume><issue>4</issue><spage>378</spage><epage>386</epage><pages>378-386</pages><issn>0141-6359</issn><eissn>1873-2372</eissn><coden>PREGDL</coden><abstract>Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. The machining pressure was estimated from the micro-cutting forces, and a subsurface damage model was proposed by considering the phase transformation and dislocation behavior of silicon under high-pressure conditions.</abstract><cop>New York, NY</cop><pub>Elsevier Inc</pub><doi>10.1016/j.precisioneng.2008.10.008</doi><tpages>9</tpages></addata></record>
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subjects Applied sciences
Dislocation
Ductile machining
Exact sciences and technology
High pressure
Mechanical engineering. Machine design
Nano precision cutting
Phase transformation
Precision engineering, watch making
Single crystal silicon
Subsurface damage
title Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-23T03%3A13%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fundamental%20investigation%20of%20subsurface%20damage%20in%20single%20crystalline%20silicon%20caused%20by%20diamond%20machining&rft.jtitle=Precision%20engineering&rft.au=Yan,%20Jiwang&rft.date=2009-10-01&rft.volume=33&rft.issue=4&rft.spage=378&rft.epage=386&rft.pages=378-386&rft.issn=0141-6359&rft.eissn=1873-2372&rft.coden=PREGDL&rft_id=info:doi/10.1016/j.precisioneng.2008.10.008&rft_dat=%3Cproquest_cross%3E34749509%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c414t-77b30786baa5b94f5e4aaf295658ef0cf45b62c14a4d9d867b21c71169c337b83%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=34749509&rft_id=info:pmid/&rfr_iscdi=true