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Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining
Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorp...
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Published in: | Precision engineering 2009-10, Vol.33 (4), p.378-386 |
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creator | Yan, Jiwang Asami, Tooru Harada, Hirofumi Kuriyagawa, Tsunemoto |
description | Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. The machining pressure was estimated from the micro-cutting forces, and a subsurface damage model was proposed by considering the phase transformation and dislocation behavior of silicon under high-pressure conditions. |
doi_str_mv | 10.1016/j.precisioneng.2008.10.008 |
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Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. 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Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. The machining pressure was estimated from the micro-cutting forces, and a subsurface damage model was proposed by considering the phase transformation and dislocation behavior of silicon under high-pressure conditions.</description><subject>Applied sciences</subject><subject>Dislocation</subject><subject>Ductile machining</subject><subject>Exact sciences and technology</subject><subject>High pressure</subject><subject>Mechanical engineering. Machine design</subject><subject>Nano precision cutting</subject><subject>Phase transformation</subject><subject>Precision engineering, watch making</subject><subject>Single crystal silicon</subject><subject>Subsurface damage</subject><issn>0141-6359</issn><issn>1873-2372</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNkEFr3DAQhUVoIds0_0EEkpu3kixbdm4hzaaFQC_tWYzl0UaLLW8kO7D_PrNsCD3m9EDzvTeax9iVFGspZP1jt94ndCGHKWLcrpUQDQ3WJGdsJRtTFqo06gtbCallUZdVe86-5bwTQphG6BV73iyxhxHjDAMP8RXzHLYwUx6fPM9Ll5fkwSEnCLZICM8hbgfkLh0ymYYQkZ6G4MjiYMnY8-7A-wDjFHs-gnsOkRzf2VcPQ8bLd71g_zYPf-9_FU9_Hn_f3z0VTks9F8Z0JX2t7gCqrtW-Qg3gVVvVVYNeOK-rrlZOatB92ze16ZR0Rsq6dWVpuqa8YDen3H2aXhY6x44hOxwGiDgt2Zba6LYSLYG3J9ClKeeE3u5TGCEdrBT2WK7d2f_LtcdyjzMSMl-_b4HsYPAJIoEfCUo2UiiliPt54pBOfg2YbHYBo8M-UPRs-yl8Zt0blBGZOA</recordid><startdate>20091001</startdate><enddate>20091001</enddate><creator>Yan, Jiwang</creator><creator>Asami, Tooru</creator><creator>Harada, Hirofumi</creator><creator>Kuriyagawa, Tsunemoto</creator><general>Elsevier Inc</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope></search><sort><creationdate>20091001</creationdate><title>Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining</title><author>Yan, Jiwang ; Asami, Tooru ; Harada, Hirofumi ; Kuriyagawa, Tsunemoto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c414t-77b30786baa5b94f5e4aaf295658ef0cf45b62c14a4d9d867b21c71169c337b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Dislocation</topic><topic>Ductile machining</topic><topic>Exact sciences and technology</topic><topic>High pressure</topic><topic>Mechanical engineering. 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subjects | Applied sciences Dislocation Ductile machining Exact sciences and technology High pressure Mechanical engineering. Machine design Nano precision cutting Phase transformation Precision engineering, watch making Single crystal silicon Subsurface damage |
title | Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining |
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