Formation of a √3 x √3 surface on Si/Ge(1 1 1) studied by STM and LEED

We have performed a detailed study of the formation and the atomic structure of a [sqrt]3 x [sqrt]3 surface on Si/Ge(1 1 1) using both scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Both experimental methods confirm the presence of a [sqrt]3 x [sqrt]3 periodicity but...

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Bibliographic Details
Published in:Surface science 2009-08, Vol.603 (16), p.2532-2536
Main Authors: OSIECKI, Jacek R, UHRBERG, R. I. G
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Physics
Online Access:Get full text
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Summary:We have performed a detailed study of the formation and the atomic structure of a [sqrt]3 x [sqrt]3 surface on Si/Ge(1 1 1) using both scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Both experimental methods confirm the presence of a [sqrt]3 x [sqrt]3 periodicity but unlike the Sn/Ge(1 1 1) and the Sn/Si(1 1 1) surfaces, the Si/Ge(1 1 1) surface is not well ordered. There is no long range order on the surface and the [sqrt]3 x [sqrt]3 reconstruction is made up of double rows of silicon atoms separated by disordered areas composed of germanium atoms.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2009.05.028