HIGH Q MICROWAVE DIELECTRIC CERAMICS IN SYSTEM

(Ni1-xZnx)Nb2O6, x = 0-1.0, ceramics with > 97% were prepared by a conventional solid-state followed by sintering at 1200-1300 C (depending the value of x). The XRD patterns of the sintered (x = 0-1.0) revealed single-phase formation with columbite (Pbcn) structure. The unit cell volume increased...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2009-01, Vol.92 (5), p.1047-1053
Main Authors: Butee, S, Kulkarni, A, Prakash, O, Aiyar, RPRC, George, S, Sebastian, M
Format: Article
Language:English
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Summary:(Ni1-xZnx)Nb2O6, x = 0-1.0, ceramics with > 97% were prepared by a conventional solid-state followed by sintering at 1200-1300 C (depending the value of x). The XRD patterns of the sintered (x = 0-1.0) revealed single-phase formation with columbite (Pbcn) structure. The unit cell volume increased with increasing Zn content (x). All the showed high dc electrical resistivity (1.6 plus minus 0.3 x 10 exp(11) ohm.cm). The microwave GHz) dielectric properties of (Ni1-xZnx)Nb2O6 exhibited a significant dependence on the Zn and to some extent on the morphology of the As x was increased from 0 to 1, the average grain monotonically increased from 7.6 to 21.2 micron the microwave dielectric constant (epsilon'r) from 23.6 to 26.1, while the quality factors increased from 18900 to 103730 GHz and the coefficient of resonant frequency (tauf) from -62 to -73 ppm/C. The highest observed were: Quxf = 103730 GHz, and epsilon'r = 26.1 for ZnNb2O6-sintered ceramics.
ISSN:0002-7820