Aluminum oxynitride dielectrics for multilayer capacitors with higher energy density and wide temperature properties

• Published in: Thin solid films 2009-11, Vol.518 (1), p.366-371
• Main Authors: Bray, K.R., Wu, R.L.C., Fries-Carr, S., Weimer, J.
• Format: Article
• Language: English
• Subjects: Aluminum oxynitride; Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Dielectric; Electrical properties of specific thin films; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; High temperature; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Multilayer capacitors; Physical properties of thin films, nonelectronic; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thermal stability; thermal effects
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.06.052

Amorphous aluminum oxynitride (AlON) possesses unique properties of high dielectric strength, high resistivity, low loss, high decomposition temperature, chemical inertness, and high thermal conductivity. These properties make it a candidate for a next generation capacitor dielectric. DC pulsed magnetron reactive sputtering is used to produce amorphous AlON films on various substrates. Dielectric properties are optimized by adjusting DC power, pulse frequency, total pressure, substrate temperature, and gas ratio. Simple parallel plate structures are utilized to characterize the dielectric properties. Clearable electrodes are evaluated in device performance. Defects cleared without significant loss of capacitance. Temperature dependent dielectric properties were evaluated from − 200 °C to + 400 °C. Stacked multilayer capacitor device is developed for high energy density and wide temperature applications.