A Monte Carlo investigation of growth and characterization of heteroepitaxial thin films

We investigate the growth of mismatched thin films by a kinetic Monte Carlo computer simulation and including a local photoemission model with reflection high-energy electron diffraction (RHEED) intensity for comparison. The strain is introduced through an elastic energy term based on a valence forc...

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Bibliographic Details
Published in:Thin solid films 2009-10, Vol.517 (23), p.6260-6263
Main Authors: Fazouan, N., Atmani, E., Djafari Rouhani, M., Esteve, A.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Dislocations
Exact sciences and technology
Heteroepitaxial growth
Kinetic Monte Carlo simulation
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Other semiconductors
Photoemission
Physics
RHEED
Roughness
Specific materials
Theory and models of film growth
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Summary:We investigate the growth of mismatched thin films by a kinetic Monte Carlo computer simulation and including a local photoemission model with reflection high-energy electron diffraction (RHEED) intensity for comparison. The strain is introduced through an elastic energy term based on a valence force field approximation. We describe an atomistic mechanism for dislocation nucleation during first stage of GaSb/GaAs (001) growth and in situ variations of photoemission current (PE) and RHEED intensity are reported. We have shown the formation of grooves corresponding to (111) facets, a precursor to the formation of misfit defects. The surface roughening and facetting by creation of grooves explain the absence of photoemission and RHEED oscillations in accordance with experimental observations [J.J. Zinck and D.H. Chow, J. Cryst. Growth, 175/176 (1997) 323, J.J. Zinck and D.H Chow, Appl. Phys. Lett. 66 (1995) 3524].
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2009.02.097