Effect of eccentricity in the spin accumulation effect induced in semiconductors rings with Rashba spin orbit interaction

A spin accumulation effect (SAE) is induced in a semiconductor nanoring with Rashba spin orbit interaction and pierced by a magnetic flux. We show that when the sample is not perfectly symmetric, the profile of the SAE can be highly inhomogeneous along specific orientations. In particular, we analyz...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2009-10, Vol.404 (18), p.2826-2829
Main Authors: Segura, L.E., Sánchez, M.J.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
Physics
Rashba spin orbit interaction
Semiconductor nanorings
Spin accumulation effect
Spin polarized transport
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Summary:A spin accumulation effect (SAE) is induced in a semiconductor nanoring with Rashba spin orbit interaction and pierced by a magnetic flux. We show that when the sample is not perfectly symmetric, the profile of the SAE can be highly inhomogeneous along specific orientations. In particular, we analyze the anisotropy generated in the angular profile by a finite eccentricity. We discuss the feasibility of detecting the effect with usual magneto optical techniques for a number of electrons and values of magnetic fluxes experimentally accessible.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2009.06.095