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High-pressure induced structural phase transition in alkaline earth CaX (X = S, Se and Te) semiconductors: NaCl-type ( B1) to CsCl-type ( B2)
The present paper addresses the pressure-induced structural aspects of NaCl-type ( B1) to CsCl-type ( B2) structure in alkaline earth chalcogenides (AECs) calcium chalcogenides (CaX; X = S, Se and Te) by formulating an effective interionic interaction potential (EIoIP) with long-range Coulomb intera...
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Published in: | Journal of alloys and compounds 2009-09, Vol.484 (1), p.239-245 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The present paper addresses the pressure-induced structural aspects of NaCl-type (
B1) to CsCl-type (
B2) structure in alkaline earth chalcogenides (AECs) calcium chalcogenides (CaX; X
=
S, Se and Te) by formulating an effective interionic interaction potential (EIoIP) with long-range Coulomb interactions and the Hafemeister and Flygare type short-range overlap repulsion extended upto the second neighbor ions and the van der Waals (vdW) interaction. The vdW coefficients are evaluated following the Slater-Kirkwood variational method, as both the ions are polarizable. The present calculations have revealed reasonably good agreement with the available experimental data on structural transition (
B1 to
B2 structure), the phase transition pressures (
P
t
) of 40 (CaS), 38 (CaSe) and 34 (CaTe) GPa as well the elastic properties. The calculated values of the volume collapses [Δ
V(
P)/
V(0)] are also closer to their observed data. Further, the variations of the second and third order elastic constants with pressure have followed a systematic trend, which are almost identical to those exhibited by the observed data measured for other semiconducting compounds with rocksalt (
B1) type crystal structure. The Born and relative stability criteria is valid in Ca monochalcogenides. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2009.04.022 |