Improvement of stoichiometry in (ZnO) 1− x (GaN) x thin films grown by laser ablation

• Published in: Journal of alloys and compounds 2008-10, Vol.465 (1), p.502-505
• Main Authors: Gopalakrishnan, N., Shin, B.C., Bhuvana, K.P., Elanchezhiyan, J., Balasubramanian, T.
• Format: Article
• Language: English
• Subjects: AFM; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Ii-vi semiconductors; Laser ablation; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Photoluminescence; Physics; Point defects; Stoichiometry; X-ray diffraction; ZnO film
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2007.10.135

The fabrication of pure and GaN (1 mol%) doped ZnO thin films by KrF excimer laser have been addressed. The fabricated films on Si(1 1 1) substrates have been investigated by X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) in order to investigate the structural, optical and morphological properties, respectively. The XRD analysis shows that the full width at half maximum (FWHM) of ZnO film is found to be decreased as doped with GaN due to the improvement of the stoichiometery between Zn and O. The PL spectra reveal that the deep level emissions due to native donor defects in pure ZnO are suppressed upon doping with GaN. The images of AFM show that the RMS surface roughness of pure ZnO, 27 nm is reduced to18 nm while doped with 1 mol% GaN. The incorporation of nitrogen in the film is confirmed by glow discharge mass spectroscopy (GDMS). The improved structural, optical and morphological properties of ZnO by GaN dopant due to enhancement of stoichiometry have been discussed in detail.