Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices

The optimization of the electronic properties of InGaP/GaAs MQWs, to be inserted in multilayers heterostructure for novel photovoltaic devices, was performed by structural, optical and photoelectrical measurements. Different sequences of nominally undoped InGaP and GaAs alternated layers were grown...

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Bibliographic Details
Published in:Journal of crystal growth 2009-09, Vol.311 (18), p.4293-4300
Main Authors: Longo, M., Parisini, A., Tarricone, L., Vantaggio, S., Bocchi, C., Germini, F., Lazzarini, L.
Format: Article
Language:English
Subjects:
A1. InGaP/GaAs interfaces
A3. Gas-switching sequence
A3. MOVPE
A3. Multi-quantum wells
Applied sciences
B2. Semiconducting indium gallium phosphide
B3. Solar cells
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Energy
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Natural energy
Other materials
Photovoltaic conversion
Physics
Solar cells. Photoelectrochemical cells
Solar energy
Solubility, segregation, and mixing
phase separation
Specific materials
Vapor phase epitaxy
growth from vapor phase
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Summary:The optimization of the electronic properties of InGaP/GaAs MQWs, to be inserted in multilayers heterostructure for novel photovoltaic devices, was performed by structural, optical and photoelectrical measurements. Different sequences of nominally undoped InGaP and GaAs alternated layers were grown by low-pressure metalorganic vapour phase epitaxy, employing tertiarybutylarsine and tertiarybutylphosphine as metalorganic precursors for the V-group elements. In order to minimize the As/P exchange effect, the interface In segregation, and to control the whole lattice matching, single and multi-quantum wells (MQWs) with different: (i) periods, (ii) well widths, (iii) growth temperatures, (iv) gas-switching sequences at the interfaces and (v) indium concentrations in the InGaP alloy, were prepared and investigated. The interface sharpness and the compositional fluctuation of thick MQW region containing up to 40 well-barrier sequences were investigated for the modelling, realization and evaluation of test structures based on low-dimensional systems for third generation solar cells.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2009.07.015