Atomic ordering in GaAsSb (0 0 1) grown by metalorganic vapor phase epitaxy

• Published in: Journal of crystal growth 2009-09, Vol.311 (19), p.4391-4397
• Main Authors: Jiang, W.Y., Kavanagh, K.L., Watkins, S.P.
• Format: Article
• Language: English
• Subjects: A1. High resolution X-ray diffraction; A3. Organometallic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting III–V materials; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; General studies of phase transitions; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Order-disorder and statistical mechanics of model systems; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2009.07.033

Epitaxial GaAsSb (0 0 1) semiconductor alloys grown by metalorganic vapor phase epitaxy exhibit several spontaneously ordered structures. A superlattice structure with three-fold ordering in the [1 1 0] direction has been previously observed by different groups. CuAu structures with (1 0 0) and (0 1 0) ordering planes have also been reported. The physical origin of CuAu ordering in III–V semiconductors has not yet been explained. In this work we report the effect of growth conditions on CuAu ordering in GaAsSb, including miscut from (0 0 1), growth rate, bismuth surfactant concentration, and growth temperature. These data point to a surface kinetic mechanism not based on dimer strain, but possibly due to one-dimensional ordering at step edges.