An improved non-alloyed ohmic contact Cr/Ni/Au to n-type GaN with surface treatment

The Cr/Ni/Au non-alloyed ohmic contact resistance on n-type GaN is obtained by chemical surface treatment of n-type GaN films following the laser lift-off of the sapphire substrate. The effects of n-GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2008-09, Vol.41 (17), p.175107-175107 (4)
Main Authors: Cho, Hyun Kyong, Kim, Sun-Kyung, Lee, Jeong Soo
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Metal-nonmetal contacts
Physics
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Summary:The Cr/Ni/Au non-alloyed ohmic contact resistance on n-type GaN is obtained by chemical surface treatment of n-type GaN films following the laser lift-off of the sapphire substrate. The effects of n-GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. Nitrogen vacancies at the n-type GaN surface are therefore produced and act as donors for electrons, improving the non-alloyed ohmic contact resistance induced by the reduction in native oxygen by the surface treatment of chemical solutions. In addition, the n-GaN surface treatment reduces the forward voltage (Vf) of the vertical LEDs.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/41/17/175107