Detection of Explosives Using Field-Effect Transistors

The gate surfaces of ion‐sensitive field‐effect transistor (ISFET) devices were functionalized with the π‐donor units, 6‐hydroxydopamine (1) or 4‐aminothiophenol (2). Concentration of trinitrotoluene, TNT, on the gate via π‐donor‐acceptor interactions yields charge‐transfer complexes that alter the...

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Bibliographic Details
Published in:Electroanalysis (New York, N.Y.) N.Y.), 2009-10, Vol.21 (20), p.2185-2189
Main Authors: Sharon, Etery, Freeman, Ronit, Willner, Itamar
Format: Article
Language:English
Subjects:
Explosives
Field-effect transistors
Sensors
TNT
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Summary:The gate surfaces of ion‐sensitive field‐effect transistor (ISFET) devices were functionalized with the π‐donor units, 6‐hydroxydopamine (1) or 4‐aminothiophenol (2). Concentration of trinitrotoluene, TNT, on the gate via π‐donor‐acceptor interactions yields charge‐transfer complexes that alter the gate potential. This enables the label‐free analysis of TNT with a detection limit corresponding to 1×10−7 M.
ISSN:1040-0397
1521-4109
DOI:10.1002/elan.200900271