Detection of Explosives Using Field-Effect Transistors

The gate surfaces of ion‐sensitive field‐effect transistor (ISFET) devices were functionalized with the π‐donor units, 6‐hydroxydopamine (1) or 4‐aminothiophenol (2). Concentration of trinitrotoluene, TNT, on the gate via π‐donor‐acceptor interactions yields charge‐transfer complexes that alter the...

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Published in:Electroanalysis (New York, N.Y.) N.Y.), 2009-10, Vol.21 (20), p.2185-2189
Main Authors: Sharon, Etery, Freeman, Ronit, Willner, Itamar
Format: Article
Language:English
Subjects:
Explosives
Field-effect transistors
Sensors
TNT
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cited_by cdi_FETCH-LOGICAL-c3581-5c4bfa4044899769c033b95b1ff2a7b8f40658eb5eca2905bc14a3b7090bb0ed3
cites cdi_FETCH-LOGICAL-c3581-5c4bfa4044899769c033b95b1ff2a7b8f40658eb5eca2905bc14a3b7090bb0ed3
container_end_page 2189
container_issue 20
container_start_page 2185
container_title Electroanalysis (New York, N.Y.)
container_volume 21
creator Sharon, Etery
Freeman, Ronit
Willner, Itamar
description The gate surfaces of ion‐sensitive field‐effect transistor (ISFET) devices were functionalized with the π‐donor units, 6‐hydroxydopamine (1) or 4‐aminothiophenol (2). Concentration of trinitrotoluene, TNT, on the gate via π‐donor‐acceptor interactions yields charge‐transfer complexes that alter the gate potential. This enables the label‐free analysis of TNT with a detection limit corresponding to 1×10−7 M.
doi_str_mv 10.1002/elan.200900271
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_34972849</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34972849</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3581-5c4bfa4044899769c033b95b1ff2a7b8f40658eb5eca2905bc14a3b7090bb0ed3</originalsourceid><addsrcrecordid>eNqFkMFPwjAUhxujiYhePe_kbdiu7boeUQaaEDQR8Ni0pTXVsWE7FP57S2aIN0_vveT7XvL7AXCN4ABBmN2aStaDDEIeD4ZOQA_RDKUEQX4ad0hgCjFn5-AihHcYsZzwHshHpjW6dU2dNDYpd5uqCe7LhGQRXP2WjJ2pVmlpbWSSuZd1cKFtfLgEZ1ZWwVz9zj5YjMv5_UM6fZo83g-nqca0QCnVRFlJICEF5yznGmKsOFXI2kwyVVgCc1oYRY2WGYdUaUQkVixmUAqaFe6Dm-7vxjefWxNasXZBmypGNc02CEw4ywrCIzjoQO2bELyxYuPdWvq9QFAc6hGHesSxnijwTvh2ldn_Q4tyOpz9ddPOjWWY3dGV_kPkDDMqXmcTsVyi_Hk0uhMv-AfLrnf-</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34972849</pqid></control><display><type>article</type><title>Detection of Explosives Using Field-Effect Transistors</title><source>Wiley:Jisc Collections:Wiley Read and Publish Open Access 2024-2025 (reading list)</source><creator>Sharon, Etery ; Freeman, Ronit ; Willner, Itamar</creator><creatorcontrib>Sharon, Etery ; Freeman, Ronit ; Willner, Itamar</creatorcontrib><description>The gate surfaces of ion‐sensitive field‐effect transistor (ISFET) devices were functionalized with the π‐donor units, 6‐hydroxydopamine (1) or 4‐aminothiophenol (2). Concentration of trinitrotoluene, TNT, on the gate via π‐donor‐acceptor interactions yields charge‐transfer complexes that alter the gate potential. This enables the label‐free analysis of TNT with a detection limit corresponding to 1×10−7 M.</description><identifier>ISSN: 1040-0397</identifier><identifier>EISSN: 1521-4109</identifier><identifier>DOI: 10.1002/elan.200900271</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>Explosives ; Field-effect transistors ; Sensors ; TNT</subject><ispartof>Electroanalysis (New York, N.Y.), 2009-10, Vol.21 (20), p.2185-2189</ispartof><rights>Copyright © 2009 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3581-5c4bfa4044899769c033b95b1ff2a7b8f40658eb5eca2905bc14a3b7090bb0ed3</citedby><cites>FETCH-LOGICAL-c3581-5c4bfa4044899769c033b95b1ff2a7b8f40658eb5eca2905bc14a3b7090bb0ed3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Sharon, Etery</creatorcontrib><creatorcontrib>Freeman, Ronit</creatorcontrib><creatorcontrib>Willner, Itamar</creatorcontrib><title>Detection of Explosives Using Field-Effect Transistors</title><title>Electroanalysis (New York, N.Y.)</title><addtitle>Electroanalysis</addtitle><description>The gate surfaces of ion‐sensitive field‐effect transistor (ISFET) devices were functionalized with the π‐donor units, 6‐hydroxydopamine (1) or 4‐aminothiophenol (2). Concentration of trinitrotoluene, TNT, on the gate via π‐donor‐acceptor interactions yields charge‐transfer complexes that alter the gate potential. This enables the label‐free analysis of TNT with a detection limit corresponding to 1×10−7 M.</description><subject>Explosives</subject><subject>Field-effect transistors</subject><subject>Sensors</subject><subject>TNT</subject><issn>1040-0397</issn><issn>1521-4109</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkMFPwjAUhxujiYhePe_kbdiu7boeUQaaEDQR8Ni0pTXVsWE7FP57S2aIN0_vveT7XvL7AXCN4ABBmN2aStaDDEIeD4ZOQA_RDKUEQX4ad0hgCjFn5-AihHcYsZzwHshHpjW6dU2dNDYpd5uqCe7LhGQRXP2WjJ2pVmlpbWSSuZd1cKFtfLgEZ1ZWwVz9zj5YjMv5_UM6fZo83g-nqca0QCnVRFlJICEF5yznGmKsOFXI2kwyVVgCc1oYRY2WGYdUaUQkVixmUAqaFe6Dm-7vxjefWxNasXZBmypGNc02CEw4ywrCIzjoQO2bELyxYuPdWvq9QFAc6hGHesSxnijwTvh2ldn_Q4tyOpz9ddPOjWWY3dGV_kPkDDMqXmcTsVyi_Hk0uhMv-AfLrnf-</recordid><startdate>200910</startdate><enddate>200910</enddate><creator>Sharon, Etery</creator><creator>Freeman, Ronit</creator><creator>Willner, Itamar</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200910</creationdate><title>Detection of Explosives Using Field-Effect Transistors</title><author>Sharon, Etery ; Freeman, Ronit ; Willner, Itamar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3581-5c4bfa4044899769c033b95b1ff2a7b8f40658eb5eca2905bc14a3b7090bb0ed3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Explosives</topic><topic>Field-effect transistors</topic><topic>Sensors</topic><topic>TNT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sharon, Etery</creatorcontrib><creatorcontrib>Freeman, Ronit</creatorcontrib><creatorcontrib>Willner, Itamar</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Electroanalysis (New York, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sharon, Etery</au><au>Freeman, Ronit</au><au>Willner, Itamar</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Detection of Explosives Using Field-Effect Transistors</atitle><jtitle>Electroanalysis (New York, N.Y.)</jtitle><addtitle>Electroanalysis</addtitle><date>2009-10</date><risdate>2009</risdate><volume>21</volume><issue>20</issue><spage>2185</spage><epage>2189</epage><pages>2185-2189</pages><issn>1040-0397</issn><eissn>1521-4109</eissn><abstract>The gate surfaces of ion‐sensitive field‐effect transistor (ISFET) devices were functionalized with the π‐donor units, 6‐hydroxydopamine (1) or 4‐aminothiophenol (2). Concentration of trinitrotoluene, TNT, on the gate via π‐donor‐acceptor interactions yields charge‐transfer complexes that alter the gate potential. This enables the label‐free analysis of TNT with a detection limit corresponding to 1×10−7 M.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/elan.200900271</doi><tpages>5</tpages></addata></record>
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subjects Explosives
Field-effect transistors
Sensors
TNT
title Detection of Explosives Using Field-Effect Transistors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T11%3A38%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Detection%20of%20Explosives%20Using%20Field-Effect%20Transistors&rft.jtitle=Electroanalysis%20(New%20York,%20N.Y.)&rft.au=Sharon,%20Etery&rft.date=2009-10&rft.volume=21&rft.issue=20&rft.spage=2185&rft.epage=2189&rft.pages=2185-2189&rft.issn=1040-0397&rft.eissn=1521-4109&rft_id=info:doi/10.1002/elan.200900271&rft_dat=%3Cproquest_cross%3E34972849%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c3581-5c4bfa4044899769c033b95b1ff2a7b8f40658eb5eca2905bc14a3b7090bb0ed3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=34972849&rft_id=info:pmid/&rfr_iscdi=true