DC and small-signal comparison of horizontal emitter designs of InGaP/GaAs heterojunction bipolar transistors

This paper describes the DC and small‐signal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitter–base designs using the TCAD ATLAS device simulator. The HBT devices analyzed have the same cutoff and maximum fr...

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Bibliographic Details
Published in:International journal of numerical modelling 2009-11, Vol.22 (6), p.411-421
Main Author: López-González, Juan M.
Format: Article
Language:English
Subjects:
gallium compounds
heterojunction bipolar transistors
semiconductor device modeling
semiconductor devices
semiconductor heterojunctions
semiconductor materials
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Summary:This paper describes the DC and small‐signal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitter–base designs using the TCAD ATLAS device simulator. The HBT devices analyzed have the same cutoff and maximum frequencies but significant differences are observed in other characteristics such as base–emitter turn‐on voltage, saturation collector–emitter voltage, forward current gain, maximum transducer gain and maximum stable gain. Copyright © 2009 John Wiley & Sons, Ltd.
ISSN:0894-3370
1099-1204
DOI:10.1002/jnm.717