Formation of MgAu alloy cathode by photolithography and its application to organic light-emitting diodes and organic field effect transistors

To make an efficient electron injection electrode by photolithography, we studied MgAu alloy electrodes, which have a low work function and high resistance to humidity and oxygen. The measured work function of MgAu alloy thin film was 3.7 eV, which is comparable with that of a pure Mg layer and ∼0.8...

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Bibliographic Details
Published in:Electrical engineering in Japan 2005-07, Vol.152 (1), p.37-42
Main Authors: Oyamada, Takahito, Sasabe, Hiroyuki, Adachi, Chihaya
Format: Article
Language:English
Subjects:
electron injection
MgAu alloy
organic field-effect transistor
organic light-emitting diode
photolithography
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Summary:To make an efficient electron injection electrode by photolithography, we studied MgAu alloy electrodes, which have a low work function and high resistance to humidity and oxygen. The measured work function of MgAu alloy thin film was 3.7 eV, which is comparable with that of a pure Mg layer and ∼0.8 eV lower than that of a pure Au layer. This low work function was maintained even after photolithography, suggesting excellent stability for solvent treatment. Investigating organic field‐effect transistor (OFET) characteristics when MgAu alloy comb type source and drain electrodes were used, we successfully obtained n‐type FET operation. Furthermore, organic light‐emitting diodes (OLEDs) demonstrated the efficient electron injection characteristics of the MgAu alloy cathode, which were similar to those of the conventional MgAg cathode. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 152(1): 37–42, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ eej.20153
ISSN:0424-7760
1520-6416
DOI:10.1002/eej.20153