Geometrical effect in submicrometer channel organic field effect transistors

• Published in: Thin solid films 2009-11, Vol.518 (2), p.579-582
• Main Authors: Goto, Touichiro, Inokawa, Hiroshi, Torimitsu, Keiichi
• Format: Article
• Language: English
• Subjects: Applied sciences; Carrier mobility; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Contact resistance, contact potential; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Electronic transport phenomena in thin films and low-dimensional structures; Electronics; Exact sciences and technology; Organic field effect transistors; Physics; Semiconducting polymers; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Short-channel effects; Threshold voltage; Transistors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.07.021

The electrical behaviors of submicrometer bottom-gate bottom-contact organic field effect transistors (OFETs) with submicrometer channel lengths and channel widths were investigated. Short-channel effects (SCEs) were observed for devices with shorter channel lengths and wider channel widths. The SCEs were effectively suppressed by reducing the channel width to 50 nm. The relationship between the drain current density and the drain voltage normalized by their respective channel lengths revealed that the drain current characteristics of shorter length channels fall into two types: parasitic contact resistances at lower drain voltage and SCEs caused by the space charge limiting current at higher drain voltages. The carrier mobility was also investigated, and found to be enhanced in the narrower channel width.