Analysis and selection criteria of BSIM4 flicker noise simulation models

• Published in: International journal of circuit theory and applications 2008-10, Vol.36 (7), p.813-823
• Main Authors: Noulis, T., Siskos, S., Sarrabayrouse, G.
• Format: Article
• Language: English
• Subjects: BSIM4 MOSFET model; flicker noise exponent; SPICE-Flicker and BSIM-Flicker noise models
• ISSN: 0098-9886; 1097-007X
• DOI: 10.1002/cta.461

CMOS transistors' noise performance is mainly dominated by flicker (1/f) noise. BSIM4.X MOSFET simulation model develops two distinct models, SPICE‐Flicker and BSIM‐Flicker, to calculate flicker noise. In this paper, these two models are analytically examined and compared to noise measurements, using an NMOS and a PMOS device fabricated in 0.6µm process by Austria Mikro Systeme (AMS). MOSFET 1/f noise measurements and the respective simulations were obtained under various bias conditions, as to study which flicker noise model is the optimum in each operating region. Measurement temperature was constant at 295 K. Comparisons suggest that in an NMOS transistor operating in the triode or saturation region, BSIM‐Flicker model is accurate and therefore preferable. In a PMOS transistor, the most suitable model to describe its 1/f noise performance in the linear regime is also BSIM‐Flicker, whereas SPICE‐Flicker is more preferable in saturation. In NMOS transistors, the selected model provides a great accurate description of flicker noise, contrary to PMOS transistors, where simulation models appear to be quite unreliable and need further improvement. Copyright © 2007 John Wiley & Sons, Ltd.