Effect of Doping Concentration on Electrical Characteristics of NMOS Structure

This project focuses on five different gate lengths; 0.35 mum, 0.25 mum, 0.18 mum, 0.13 mum and 0.09 mum. These gate lengths were determined by changing the etch location of polysilicon during the fabrication process of NMOS. The electrical characteristics that investigated were threshold voltage (V...

Full description

Saved in:
Bibliographic Details
Published in:AIP conference proceedings 2008-11, Vol.1136, p.575-580
Main Authors: Suziana, O, Ayub, B, Redzuan, M, Shahrir, A R, Yunus, M Y, Abdullah, M H, Noor, U M, Rusop, M
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This project focuses on five different gate lengths; 0.35 mum, 0.25 mum, 0.18 mum, 0.13 mum and 0.09 mum. These gate lengths were determined by changing the etch location of polysilicon during the fabrication process of NMOS. The electrical characteristics that investigated were threshold voltage (V(th)) and current maximum (Id(max)). The investigation process was performed by analyzing boron doping concentration in the plysilicon doping, altering impurity in polysilicon doping and also changing arsenic doping concentration in source/drain annealing. The doping concentration was varied properly to gain an optimum property of the transistor. SILVACO TCAD tools were used to obtain electrical characteristics of NMOS structure. In summary, smaller gate length 0.09 mum have optimum voltage and highest current compared to others with Vth=0.0225 V and Id max= 972.465 muA for device performance.
ISSN:0094-243X