Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs

In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15Ga 0.85As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening in...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.111-114
Main Authors: Rimada, J.C., Prezioso, M., Nasi, L., Gombia, E., Mosca, R., Trevisi, G., Seravalli, L., Frigeri, P., Bocchi, C., Franchi, S.
Format: Article
Language:English
Subjects:
Electrical measurements
Indium arsenide
Molecular beam epitaxy
Quantum dots
Transmission electron microscopy
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Summary:In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15Ga 0.85As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening in the InAs/GaAs system. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance–voltage ( C– V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2008.10.007