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Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs

In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15Ga 0.85As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening in...

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Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.111-114
Main Authors: Rimada, J.C., Prezioso, M., Nasi, L., Gombia, E., Mosca, R., Trevisi, G., Seravalli, L., Frigeri, P., Bocchi, C., Franchi, S.
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cited_by cdi_FETCH-LOGICAL-c331t-4fc7347c4f31667a3d463ec6732778f47365b6bfa84c414a0cd33a1337e4903d3
cites cdi_FETCH-LOGICAL-c331t-4fc7347c4f31667a3d463ec6732778f47365b6bfa84c414a0cd33a1337e4903d3
container_end_page 114
container_issue 1
container_start_page 111
container_title Materials science & engineering. B, Solid-state materials for advanced technology
container_volume 165
creator Rimada, J.C.
Prezioso, M.
Nasi, L.
Gombia, E.
Mosca, R.
Trevisi, G.
Seravalli, L.
Frigeri, P.
Bocchi, C.
Franchi, S.
description In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15Ga 0.85As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening in the InAs/GaAs system. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance–voltage ( C– V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed.
doi_str_mv 10.1016/j.mseb.2008.10.007
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_34987398</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921510708004327</els_id><sourcerecordid>34987398</sourcerecordid><originalsourceid>FETCH-LOGICAL-c331t-4fc7347c4f31667a3d463ec6732778f47365b6bfa84c414a0cd33a1337e4903d3</originalsourceid><addsrcrecordid>eNp9kMFKw0AQhhdRsFZfwFNO3pLuZrbZBLyUUmuh4EXB27KdTHBLmrS7G0Gf3g0Vj56Gmfm_gfkYuxc8E1wUs3128LTLcs7LOMg4VxdsIkoFqaykvGQTXuUinQuurtmN93vOucjzfMLeVy1hcBZNm5iuTnxwA4bBxRY_jDMYyNlvE2zfJX2TbLqFn226tVn45DSYLgyHpO7DH0Y-icFxfcuuGtN6uvutU_b2tHpdPqfbl_VmudimCCBCKhtUIBXKBkRRKAO1LICwUJArVTZSQTHfFbvGlBKlkIZjDWAEgCJZcahhyh7Od4-uPw3kgz5Yj9S2pqN-8BpkFTVUZQzm5yC63ntHjT46ezDuSwuuR4l6r0eJepQ4zqLECD2eIYovfFpy2qOlDqm2LnrTdW__w38AYNR65Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34987398</pqid></control><display><type>article</type><title>Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs</title><source>ScienceDirect Journals</source><creator>Rimada, J.C. ; Prezioso, M. ; Nasi, L. ; Gombia, E. ; Mosca, R. ; Trevisi, G. ; Seravalli, L. ; Frigeri, P. ; Bocchi, C. ; Franchi, S.</creator><creatorcontrib>Rimada, J.C. ; Prezioso, M. ; Nasi, L. ; Gombia, E. ; Mosca, R. ; Trevisi, G. ; Seravalli, L. ; Frigeri, P. ; Bocchi, C. ; Franchi, S.</creatorcontrib><description>In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15Ga 0.85As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening in the InAs/GaAs system. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance–voltage ( C– V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/j.mseb.2008.10.007</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Electrical measurements ; Indium arsenide ; Molecular beam epitaxy ; Quantum dots ; Transmission electron microscopy</subject><ispartof>Materials science &amp; engineering. B, Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.111-114</ispartof><rights>2008 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-4fc7347c4f31667a3d463ec6732778f47365b6bfa84c414a0cd33a1337e4903d3</citedby><cites>FETCH-LOGICAL-c331t-4fc7347c4f31667a3d463ec6732778f47365b6bfa84c414a0cd33a1337e4903d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Rimada, J.C.</creatorcontrib><creatorcontrib>Prezioso, M.</creatorcontrib><creatorcontrib>Nasi, L.</creatorcontrib><creatorcontrib>Gombia, E.</creatorcontrib><creatorcontrib>Mosca, R.</creatorcontrib><creatorcontrib>Trevisi, G.</creatorcontrib><creatorcontrib>Seravalli, L.</creatorcontrib><creatorcontrib>Frigeri, P.</creatorcontrib><creatorcontrib>Bocchi, C.</creatorcontrib><creatorcontrib>Franchi, S.</creatorcontrib><title>Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs</title><title>Materials science &amp; engineering. B, Solid-state materials for advanced technology</title><description>In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15Ga 0.85As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening in the InAs/GaAs system. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance–voltage ( C– V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed.</description><subject>Electrical measurements</subject><subject>Indium arsenide</subject><subject>Molecular beam epitaxy</subject><subject>Quantum dots</subject><subject>Transmission electron microscopy</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kMFKw0AQhhdRsFZfwFNO3pLuZrbZBLyUUmuh4EXB27KdTHBLmrS7G0Gf3g0Vj56Gmfm_gfkYuxc8E1wUs3128LTLcs7LOMg4VxdsIkoFqaykvGQTXuUinQuurtmN93vOucjzfMLeVy1hcBZNm5iuTnxwA4bBxRY_jDMYyNlvE2zfJX2TbLqFn226tVn45DSYLgyHpO7DH0Y-icFxfcuuGtN6uvutU_b2tHpdPqfbl_VmudimCCBCKhtUIBXKBkRRKAO1LICwUJArVTZSQTHfFbvGlBKlkIZjDWAEgCJZcahhyh7Od4-uPw3kgz5Yj9S2pqN-8BpkFTVUZQzm5yC63ntHjT46ezDuSwuuR4l6r0eJepQ4zqLECD2eIYovfFpy2qOlDqm2LnrTdW__w38AYNR65Q</recordid><startdate>20091125</startdate><enddate>20091125</enddate><creator>Rimada, J.C.</creator><creator>Prezioso, M.</creator><creator>Nasi, L.</creator><creator>Gombia, E.</creator><creator>Mosca, R.</creator><creator>Trevisi, G.</creator><creator>Seravalli, L.</creator><creator>Frigeri, P.</creator><creator>Bocchi, C.</creator><creator>Franchi, S.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20091125</creationdate><title>Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs</title><author>Rimada, J.C. ; Prezioso, M. ; Nasi, L. ; Gombia, E. ; Mosca, R. ; Trevisi, G. ; Seravalli, L. ; Frigeri, P. ; Bocchi, C. ; Franchi, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-4fc7347c4f31667a3d463ec6732778f47365b6bfa84c414a0cd33a1337e4903d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Electrical measurements</topic><topic>Indium arsenide</topic><topic>Molecular beam epitaxy</topic><topic>Quantum dots</topic><topic>Transmission electron microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rimada, J.C.</creatorcontrib><creatorcontrib>Prezioso, M.</creatorcontrib><creatorcontrib>Nasi, L.</creatorcontrib><creatorcontrib>Gombia, E.</creatorcontrib><creatorcontrib>Mosca, R.</creatorcontrib><creatorcontrib>Trevisi, G.</creatorcontrib><creatorcontrib>Seravalli, L.</creatorcontrib><creatorcontrib>Frigeri, P.</creatorcontrib><creatorcontrib>Bocchi, C.</creatorcontrib><creatorcontrib>Franchi, S.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science &amp; engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rimada, J.C.</au><au>Prezioso, M.</au><au>Nasi, L.</au><au>Gombia, E.</au><au>Mosca, R.</au><au>Trevisi, G.</au><au>Seravalli, L.</au><au>Frigeri, P.</au><au>Bocchi, C.</au><au>Franchi, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs</atitle><jtitle>Materials science &amp; engineering. B, Solid-state materials for advanced technology</jtitle><date>2009-11-25</date><risdate>2009</risdate><volume>165</volume><issue>1</issue><spage>111</spage><epage>114</epage><pages>111-114</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15Ga 0.85As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening in the InAs/GaAs system. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance–voltage ( C– V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mseb.2008.10.007</doi><tpages>4</tpages></addata></record>
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subjects Electrical measurements
Indium arsenide
Molecular beam epitaxy
Quantum dots
Transmission electron microscopy
title Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T15%3A39%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20and%20structural%20characterization%20of%20InAs/InGaAs%20quantum%20dot%20structures%20on%20GaAs&rft.jtitle=Materials%20science%20&%20engineering.%20B,%20Solid-state%20materials%20for%20advanced%20technology&rft.au=Rimada,%20J.C.&rft.date=2009-11-25&rft.volume=165&rft.issue=1&rft.spage=111&rft.epage=114&rft.pages=111-114&rft.issn=0921-5107&rft.eissn=1873-4944&rft_id=info:doi/10.1016/j.mseb.2008.10.007&rft_dat=%3Cproquest_cross%3E34987398%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c331t-4fc7347c4f31667a3d463ec6732778f47365b6bfa84c414a0cd33a1337e4903d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=34987398&rft_id=info:pmid/&rfr_iscdi=true