Interface effects in spin-polarized metal/insulator layered structures

• Published in: Surface science reports 2008-09, Vol.63 (9), p.400-425
• Main Authors: Velev, J.P., Dowben, P.A., Tsymbal, E.Y., Jenkins, S.J., Caruso, A.N.
• Format: Article
• Language: English
• Subjects: Composition; defects and impurities; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Interface states; Interface structure and roughness; Magnetic tunnel junctions; Multiferroics; Physics; Solid surfaces and solid-solid interfaces; Spin polarization; Surface and interface electron states; Surface states, band structure, electron density of states; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Tunneling
• ISSN: 0167-5729; 1879-274X
• DOI: 10.1016/j.surfrep.2008.06.002

Recent advances in thin-film deposition techniques, such as molecular beam epitaxy and pulsed laser deposition, have allowed for the manufacture of heterostructures with nearly atomically abrupt interfaces. Although the bulk properties of the individual heterostructure components may be well-known, often the heterostructures exhibit novel and sometimes unexpected properties due to interface effects. At heterostructure interfaces, lattice structure, stoichiometry, interface electronic structure (bonding, interface states, etc.), and symmetry all conspire to produce behavior different from the bulk constituents. This review discusses why knowledge of the electronic structure and composition at the interfaces is pivotal to the understanding of the properties of heterostructures, particularly the (spin polarized) electronic transport in (magnetic) tunnel junctions.