Partial Polarization Matching in GaInN-Based Multiple Quantum Well Blue LEDs Using Ternary GaInN Barriers for a Reduced Efficiency Droop

GaInN-based multiple-quantum-well (MQW) blue LEDs with ternary GaInN barriers polarization-matched to GaInN wells are fabricated. Single-layered Ga 0.9 In 0.1 N and Ga 0.9 In 0.1 N/GaN multiple-layered quantum barriers (MLQBs) are used for 50% polarization matching. Compared to conventional GaInN/Ga...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2009-07, Vol.15 (4), p.1122-1127
Main Authors: Min-Ho Kim, Wonseok Lee, Di Zhu, Schubert, M.F., Jong Kyu Kim, Schubert, E.F., Yongjo Park
Format: Article
Language:English
Subjects:
Astronomy
Barriers
Electric potential
Electroluminescence
Electrons
Gallium nitride
Gallium nitrides
Injection current
Leakage current
Light emitting diodes
Matching
Optical polarization
Physics
Piezoelectric polarization
Polarization
Quantum well devices
quantum wells
Research and development
Systems engineering and theory
Voltage
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Summary:GaInN-based multiple-quantum-well (MQW) blue LEDs with ternary GaInN barriers polarization-matched to GaInN wells are fabricated. Single-layered Ga 0.9 In 0.1 N and Ga 0.9 In 0.1 N/GaN multiple-layered quantum barriers (MLQBs) are used for 50% polarization matching. Compared to conventional GaInN/GaN MQW LEDs, the polarization-matched LED with GaInN/GaN MLQBs shows a higher light output power in a high injection current regime, resulting in reduced efficiency droop, along with a minimal blue-shift of emission with injection current, reduced ideality factor, and reduced forward voltage. These results are attributed to a reduced magnitude of polarization sheet charges at heterointerfaces between the GaInN well and the GaInN barrier, and the resultant reduced internal polarization field in the MQWs, thereby minimizing electron leakage current and efficiency droop.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2009.2014395