Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy

A Raman scattering study of cation segregation in GaAs/AlAs ultrathin‐layer superlattices grown with different temperatures and As pressures is reported. The optical confined modes of the samples were measured. The kinetic segregation model was modified in order to allow the calculation of the compo...

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Bibliographic Details
Published in:Journal of Raman spectroscopy 2001-10, Vol.32 (10), p.857-861
Main Authors: Zanelato, G., Pusep, Yu. A., Galzerani, J. C., Lubyshev, D. I., González-Borrero, P. P.
Format: Article
Language:English
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Summary:A Raman scattering study of cation segregation in GaAs/AlAs ultrathin‐layer superlattices grown with different temperatures and As pressures is reported. The optical confined modes of the samples were measured. The kinetic segregation model was modified in order to allow the calculation of the compositional profiles of the samples. After utilizing the Raman wavenumbers as references to adjust the calculated values by the next‐nearest‐neighbor linear chain model, it was possible to determine the parameters characterizing the segregation. It is shown that an increase in the pressure of As results in a more abrupt compositional profile, equivalent to the decrease in the growth temperature. Copyright © 2001 John Wiley & Sons, Ltd.
ISSN:0377-0486
1097-4555
DOI:10.1002/jrs.774