Threshold Voltage Adjustment in Nanoscale DG FinFETs Via Limited Source/Drain Dopants in the Channel

Nanoscale double-gate (DG) FinFETs with undoped fin bodies are shown to have threshold voltages ( Vt ) that can be adjusted for independent I ON and I OFF control by allowing limited source/drain (S/D) dopants in the channel. S/D engineering of the lateral doping profile in the extension is proposed...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2009-10, Vol.56 (10), p.2348-2353
Main Authors: Chouksey, S., Fossum, J.G., Behnam, A., Agrawal, S., Mathew, L.
Format: Article
Language:English
Subjects:
Applied sciences
Channels
CMOS integrated circuits
Computer simulation
Design. Technologies. Operation analysis. Testing
Devices
Dopants
Doping
Drains
Effective channel length
Electronics
Exact sciences and technology
FinFETs
gate-source/drain (G-S/D) underlap
I_{\rm ON} versus I_{\rm OFF}
Integrated circuits
Logic gates
Nanocomposites
Nanomaterials
Nanoscale devices
Nanostructure
random doping fluctuations (RDFs)
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
source/drain (S/D) lateral doping profile
Threshold voltage
Transistors
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Summary:Nanoscale double-gate (DG) FinFETs with undoped fin bodies are shown to have threshold voltages ( Vt ) that can be adjusted for independent I ON and I OFF control by allowing limited source/drain (S/D) dopants in the channel. S/D engineering of the lateral doping profile in the extension is proposed as a viable means for effecting such channel doping [as well as gate-S/D (G-S/D) underlap] and, thus, adjusting Vt for optimal I ON / I OFF in low-power and high-performance applications of nanoscale-FinFET CMOS. Physics-based device simulations, numerical simulations, and measured current-voltage characteristics are used to demonstrate and support the proposed Vt design approach.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2028403