Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x ≈ 10%) saturable absorber quantum wells

We study the effect of the GaAsN narrow QWs on the optical properties of the GaInNAsSb/GaAs QWs using photoluminescence spectroscopy. A drastic effect of the N-rich layers on the QW photoluminesecnec (PL) intensity was observed with a strong influence of the spacer thickness. In the PL spectra a bro...

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Bibliographic Details
Published in:Applied surface science 2008-09, Vol.254 (22), p.7122-7126
Main Authors: BEN BOUZID, S, ZAGHDOUDI, W, HAMDOUNI, A, BEN SEDRINE, N, BOUSBIH, F, HARMAND, J. C, CHTOUROU, R
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Photoluminescence
Physics
Quantum wells
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Summary:We study the effect of the GaAsN narrow QWs on the optical properties of the GaInNAsSb/GaAs QWs using photoluminescence spectroscopy. A drastic effect of the N-rich layers on the QW photoluminesecnec (PL) intensity was observed with a strong influence of the spacer thickness. In the PL spectra a broad band caused by excitonic transitions related with N-related clusters in GaAs barriers is found. Based on calculations from experimental data, we have identified the low QW peak energy to the E1-H1 transition using the shear deformation potentials report Deltap/p = 0.24.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2008.05.225