Erbium-mediated photoconductivity of Ga–Ge–S–Se : Er3+ chalcogenide glasses

Photoconductivity mediated by erbium ions in chalcogenide glasses Ga-Ge-S has been found. The conductivity of glasses undoped and doped with erbium has been studied under irradiation by laser light at lambda = 813 nm. In both cases the optical band-gap energy exceeds by several times the laser photo...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2008-09, Vol.41 (17), p.175110-175110 (6)
Main Authors: Ivanova, T Yu, Manshina, A A, Povolotskiy, A V, Tver'yanovich, Yu S, Liaw, Shien-Kuei, Hsieh, Yao-Shung
Format: Article
Language:English
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Summary:Photoconductivity mediated by erbium ions in chalcogenide glasses Ga-Ge-S has been found. The conductivity of glasses undoped and doped with erbium has been studied under irradiation by laser light at lambda = 813 nm. In both cases the optical band-gap energy exceeds by several times the laser photon energy. It has been observed that the exposure to sub-band-gap light does not change the conductivity of the undoped glass, whereas it leads to a significant increase in the conductivity of the glass doped with erbium. We propose a two-photon mechanism of the photoconductivity in this glass, where erbium accumulates laser energy and then transfers it nonradiatively to the glass matrix (energy backtransfer).
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/41/17/175110