Deep level defects in proton irradiated p-type Al(0.5)Ga(0.5)As

The properties of deep levels created by proton irradiation in Be-doped Al(0.5)Ga(0.5)As MBE layers have been investigated using deep level transient spectroscopy (DLTS). The samples were irradiated by H(+) ions of an energy equal to 200 keV and a fluence of 3x10(11) cm(-2). DLTS revealed five hole...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2009-12, Vol.404 (23-24), p.4967-4969
Main Authors: Szatkowski, J, Sieranski, K, Placzek-Popko, E, Gumienny, Z
Format: Article
Language:English
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Summary:The properties of deep levels created by proton irradiation in Be-doped Al(0.5)Ga(0.5)As MBE layers have been investigated using deep level transient spectroscopy (DLTS). The samples were irradiated by H(+) ions of an energy equal to 200 keV and a fluence of 3x10(11) cm(-2). DLTS revealed five hole traps in the irradiated samples. Proton irradiation increased the concentration of one of the hole traps present in the as-grown p-type Al(0.5)Ga(0.5)As samples and produces three new acceptor-like traps. The concentration of the trap related to the level E(V)+0.14 eV remains unchanged during proton irradiation.
ISSN:0921-4526
DOI:10.1016/j.physb.2009.08.235