Dark current analysis of InAs/GaSb superlattices at low temperatures

A limitation to the advancement of the strained-layer superlattice technology for infrared detection is unwanted high dark currents and low R 0 A values, especially at long-wavelengths. In this paper, we discuss dark current characteristics of LWIR InAs/GaSb type-II superlattice detectors. Comparing...

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Bibliographic Details
Published in:Infrared physics & technology 2009-11, Vol.52 (6), p.317-321
Main Authors: Nguyen, Jean, Ting, David Z., Hill, Cory J., Soibel, Alexander, Keo, Sam A., Gunapala, Sarath D.
Format: Article
Language:English
Subjects:
Applied sciences
Bolometer
infrared, submillimeter wave, microwave and radiowave receivers and detectors
Communication, education, history, and philosophy
Dark current
Electronics
Exact sciences and technology
Infrared detector
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Optoelectronic devices
Physics
Physics literature and publications
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Superlattices
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Summary:A limitation to the advancement of the strained-layer superlattice technology for infrared detection is unwanted high dark currents and low R 0 A values, especially at long-wavelengths. In this paper, we discuss dark current characteristics of LWIR InAs/GaSb type-II superlattice detectors. Comparing devices with different dominant mechanisms, a more thorough analysis at low temperatures is provided.
ISSN:1350-4495
1879-0275
DOI:10.1016/j.infrared.2009.05.022