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Spatial imaging of valence band electronic structures in a GaSb/InAs quantum well

We measure local density of states (LDOS) for GaSb/InAs heterostructures with quantum wells in the valence band by scanning tunneling spectroscopy (STS) on the cleaved surface. Clear standingwave patterns of LDOS corresponding to the holes confined in the quantum wells are observed.

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Bibliographic Details
Published in:Applied surface science 2008-09, Vol.254 (23), p.7889-7892
Main Authors: Suzuki, K., Kanisawa, K., Perraud, S., Fujisawa, T.
Format: Article
Language:English
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Summary:We measure local density of states (LDOS) for GaSb/InAs heterostructures with quantum wells in the valence band by scanning tunneling spectroscopy (STS) on the cleaved surface. Clear standingwave patterns of LDOS corresponding to the holes confined in the quantum wells are observed.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2008.03.036