Hall and thermoelectric evaluation of p-type InAs

This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2009-12, Vol.404 (23-24), p.5038-5041
Main Authors: Wagener, M.C., Wagener, V., Botha, J.R.
Format: Article
Language:English
Subjects:
Hall effect
InAs
p-Doping
Thermoelectric effect
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Summary:This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2009.08.256