The energy distribution of field-emitted electrons from GaAs crystals

Energy spectroscopy of electrons emitted from GaAs crystals of n- and p-type conductivity has been studied for different values of the applied electric field as well as for different surface conditions at the emitting surface of the crystals. Analysis of the electron energy spectra for the n-GaAs em...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2008-10, Vol.20 (39), p.395002-395002 (6)
Main Authors: Deck, T, Moscardini, A O, Kalganov, V D, Mileshkina, N V
Format: Article
Language:English
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Summary:Energy spectroscopy of electrons emitted from GaAs crystals of n- and p-type conductivity has been studied for different values of the applied electric field as well as for different surface conditions at the emitting surface of the crystals. Analysis of the electron energy spectra for the n-GaAs emitter shows that the electrons forming the field-emission current for the near degenerate n-type semiconductor originate from the valence band. A physical mechanism that could possibly lead to predominant emission from the valence band of the n-type semiconductor has been proposed. The electron energy distribution has also been measured for the p-GaAs field emitters. The results show that it depends essentially on the external field applied to the surface. Electron field emission from a p-type semiconductor has been discussed with consideration of tunnel current from the surface self-consistent quantum well.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/20/39/395002