E center annealing in SiGe: Stability and charge states

We have studied proton irradiated and annealed n-type SiGe with a P dopant concentration in the 1 × 10 18 cm −3 range by positron annihilation spectroscopy. The Ge contents in the samples were 10, 20 and 30%. The results show that by annealing the irradiated samples at temperatures 250–350 °C, the G...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2008-12, Vol.154, p.141-143
Main Authors: Kuitunen, K., Kilpeläinen, S., Slotte, J., Tuomisto, F.
Format: Article
Language:English
Subjects:
Defect formation
Diffusion
Germanium
Positrons
Semiconductors
Silicon
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Summary:We have studied proton irradiated and annealed n-type SiGe with a P dopant concentration in the 1 × 10 18 cm −3 range by positron annihilation spectroscopy. The Ge contents in the samples were 10, 20 and 30%. The results show that by annealing the irradiated samples at temperatures 250–350 °C, the Ge content around the E center increases. Based on temperature-dependent and coincidence Doppler measurements, we conclude that the increase in Ge content around the E center pulls down the localized second acceptor state, found in Ge, into the SiGe band gap. This charge transition is observed even in samples annealed at 350 °C, with a considerably higher thermal budget than expected for the complex to anneal completely.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2008.08.006