Defect study in ZnO related structures—A multi-spectroscopic approach

ZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ra...

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Bibliographic Details
Published in:Applied surface science 2008-10, Vol.255 (1), p.58-62
Main Authors: Ling, C.C., Cheung, C.K., Gu, Q.L., Dai, X.M., Xu, S.J., Zhu, C.Y., Luo, J.M., Tam, K.H., Djurišić, A.B., Beling, C.D., Fung, S., Lu, L.W., Brauer, G., Anwand, W., Skorupa, W., Ong, H.C.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
DLTS
Doping and impurity implantation in iii-v and ii-vi semiconductors
Electron and ion emission by liquids and solids
impact phenomena
Exact sciences and technology
Ii-vi semiconductors
Nanorod
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other interactions of matter with particles and radiation
PAS
Photoemission and photoelectron spectra
Photoluminescence
Physics
Positron annihilation
Schottky contact
Structure of solids and liquids
crystallography
XPS
ZnO
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Summary:ZnO has attracted a great deal of attention in recent years because of its potential applications for fabricating optoelectronic devices. Using a multi-spectroscopic approach including positron annihilation spectroscopy (PAS), deep level transient spectroscopy (DLTS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), we have studied the two observed phenomena from ZnO related structures. They namely included the H 2O 2 pre-treatment induced ohmic to rectifying contact conversion on Au/ n-ZnO contact and the p-type doping by nitrogen ion implantation. The aim of the studies was to offering comprehensive views as to how the defects influenced the structures electrical and optical properties of the structures. It was also shown that PAS measurement using the monoenergetic positron beam could offer valuable information of vacancy type defects in the vertical ZnO nanorod array structure.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2008.05.309