Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy

• Published in: Journal of crystal growth 2008-11, Vol.310 (23), p.4772-4775
• Main Authors: Jha, Smita, Song, Xueyan, Babcock, S.E., Kuech, T.F., Wheeler, Dane, Wu, Bin, Fay, P., Seabaugh, Alan
• Format: Article
• Language: English
• Subjects: A3. Metalorganic vapor phase epitaxy; B1. InAs; B1. Silicon; B2. Semiconducting III–V materials; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; General studies of phase transitions; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Nucleation; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2008.07.048

The growth behavior of InAs on Si using metalorganic vapor phase epitaxy (MOVPE) was studied. The large lattice mismatch of InAs to Si, ∼12%, results in island formation under typical MOVPE growth conditions, which prevents the development of the thin coherent films of InAs needed for high-speed device applications. The growth of InAs at low temperature is expected to lead to rapid nucleation and low surface mobility, resulting in the formation of a coherent film at low thicknesses. This study explored the growth behavior of InAs on Si at low temperatures, i.e.