In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes

Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46 x 10 exp(-3) ohm.cm2 and prod...

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2007, Vol.10 (9), p.H270-H272
Main Authors: Song, June O, Kim, Kyung-Kook, Kim, Hyunsoo, Hong, Hyun-Gi, Seong, Tae-Yeon
Format: Article
Language:English
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Summary:Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46 x 10 exp(-3) ohm.cm2 and produced transmittance of 95.8% at a wavelength of 460 nm when annealed at 530 C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with In/ITO contacts was enhanced 91% at 20 mA compared to LEDs with the oxidised Ni/Au contacts. 20 refs.
ISSN:1099-0062
DOI:10.1149/1.2750442