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Microstructure-Property Relationships in Liquid Phase-Sintered High-Temperature Bismuth Scandium Oxide-Lead Titanate Piezoceramics
High‐temperature piezoelectrics are necessary for aeronautic and aerospace applications. The principal challenge for the insertion of piezoelectric materials is their limitation for upper use temperature, which is due to low Curie temperature and increasing conductivity at high temperatures. We inve...
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Published in: | Journal of the American Ceramic Society 2008-09, Vol.91 (9), p.2910-2916 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | High‐temperature piezoelectrics are necessary for aeronautic and aerospace applications. The principal challenge for the insertion of piezoelectric materials is their limitation for upper use temperature, which is due to low Curie temperature and increasing conductivity at high temperatures. We investigated processing, microstructure, and property relationships of (1−x)BiScO3−(x)PbTiO3 composition as a promising high‐temperature piezoelectric. The effects of excess PbO and Bi2O3 and their partitioning in grain boundaries were studied using impedance spectroscopy, ferroelectric, and piezoelectric measurement techniques. Excess Pb addition increased the grain‐boundary conduction and the grain‐boundary area resulting in ceramics with higher AC‐conductivity (tan δ=0.9 and 1.7 for 0 and 5 at.% excess Pb at 350°C and at 10 kHz) that were not resistive enough to pole. Excess Bi addition increased the resistivity (tan δ=0.9 and 0.1 for 0 and 5 at.% excess Pb at 350°C and at 10 kHz), improved poling, and increased the piezoelectric coefficient from 354 to 408 pC/N for 5 at.% excess Bi addition. Thus, excess Bi2O3 proved to be a successful liquid phase forming additive to improve the 0.37BiScO3–0.63PbTiO3 piezoceramics for high‐temperature applications, as a result of increased resistivity and enhanced piezoelectric activity. |
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ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/j.1551-2916.2008.02555.x |