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Influence of Heat Treating for ZnS:Mn Sputtering Targets on Inorganic Electroluminescent Device Active Layer Films

Electroluminescent device active layer thin films were fabricated by radio frequency magnetron sputtering from targets that were heat-treated mixture of ZnS and MnS powder. Heat treating eliminates impurities and makes it solid solution ( Mn incorporates ZnS). We prepared three kinds of target that...

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Bibliographic Details
Published in:Memoirs of the Faculty of Engineering, Osaka City University Osaka City University, 2008-12, Vol.49, p.1-5
Main Authors: Tanaka, Ryuta, Sakai, Ikuko, Tanaka, Kenji, Kusabiraki, Minoru
Format: Article
Language:English
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Summary:Electroluminescent device active layer thin films were fabricated by radio frequency magnetron sputtering from targets that were heat-treated mixture of ZnS and MnS powder. Heat treating eliminates impurities and makes it solid solution ( Mn incorporates ZnS). We prepared three kinds of target that vary firing temperature: 550 deg C,700 deg C and 900 deg C. Properties of targets and films are investigated by X-ray diffraction (XRD) to evaluate crystallinity and by photoluminescence (PL) to estimate state of luminescent center. Results from XRD showed that crystal properties of powder were improved with increasing temperature during heat treating but, films one were almost same for different conditions. PL spectra showed that increasing Mn2+ concentration with increasing firing temperature. Luminescence property was improved by using target which has a higher concentration of single Mn2+.
ISSN:0078-6659