Integration of organic based Schottky junctions for crossbar non-volatile memory applications

Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylenevinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current–vo...

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Bibliographic Details
Published in:Microelectronic engineering 2008-12, Vol.85 (12), p.2439-2441
Main Authors: Katsia, E., Tallarida, G., Ferrari, S., Bundgaard, E., Søndergaard, R., Krebs, F.C.
Format: Article
Language:English
Subjects:
Applied sciences
Crossbar architecture
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Materials
Microelectronic fabrication (materials and surfaces technology)
Oligophenylenevinylenes
Organic Schottky diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
UV lithography
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Summary:Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylenevinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current–voltage characteristics were studied in order to investigate which of the tested compounds could possibly reach the requirements for non-volatile memory applications. All the investigated devices displayed good rectifying properties, ranging from 10 2 to 10 4. On the other hand, one of the compounds reveals higher conductivity and possible reasons for this behavior are discussed.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2008.09.019