Reversible Modulation of Conductance in Silicon Devices via UV/Visible-Light Irradiation

Silicon devices bearing grafted molecular monolayers have their conductance reversibly modulated. By alternately illuminating the samples with visible and near‐UV light, threshold‐voltage shifts occur to the negative and positive directions, respectively. This corresponds to charge transfer/redistri...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2008-12, Vol.20 (23), p.4541-4546
Main Authors: He, Tao, Lu, Meng, Yao, Jun, He, Jianli, Chen, Bo, Di Spigna, Neil Halen, Nackashi, David P., Franzon, Paul D., Tour, James M.
Format: Article
Language:English
Subjects:
conductance
molecular monolayer
photochemistry
photoirradiation
silicon devices
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Summary:Silicon devices bearing grafted molecular monolayers have their conductance reversibly modulated. By alternately illuminating the samples with visible and near‐UV light, threshold‐voltage shifts occur to the negative and positive directions, respectively. This corresponds to charge transfer/redistribution between the silicon device and the grafted molecules.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200703084