COMPARISON OF ELECTRICAL PROPERTIES BETWEEN HfO2 FILMS ON STRAINED AND RELAXED Si1-xGex SUBSTRATES

The electrical and physical properties of atomic-layer-deposited (ALD) HfO2 on strained and relaxed Si1-xGex after postdeposition annealing (PDA) were studied. The Ge atoms which diffused into HfO2 during ALD migrated towards the substrate during PDA. The Ge recession, densification of the film, and...

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2007-01, Vol.10 (12), p.G97-G100
Main Authors: Park, T J, Kim, J H, Jang, J H, Na, K D, Seo, M, Hwang, C S, Won, J Y
Format: Article
Language:English
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Summary:The electrical and physical properties of atomic-layer-deposited (ALD) HfO2 on strained and relaxed Si1-xGex after postdeposition annealing (PDA) were studied. The Ge atoms which diffused into HfO2 during ALD migrated towards the substrate during PDA. The Ge recession, densification of the film, and suppression of the Si diffusion into the film caused by the thicker interfacial layer at a higher Ge concentration played key roles in reducing the capacitance equivalent thickness (CET) after PDA. The suppression of the Si diffusion into HfO2 on relaxed Si1-xGex resulted in a further reduction of the CET. 15 refs.
ISSN:1099-0062
DOI:10.1149/1.2787871