Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers

Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to. If a large current is applied, a reversible resistance ch...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2009-02, Vol.321 (3), p.144-147
Main Authors: KRZYSTECZKO, Patryk, XINLI KOU, ROTT, Karsten, THOMAS, Andy, REISS, Günter
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
Physics
Spin polarized transport
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Summary:Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to. If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2008.08.088