Two-Dimensional Electron Gases at Oxide Interfaces

Two-dimensional electron gases (2DEGs) based on conventional semiconductors such as Si or GaAs have played a pivotal role in fundamental science and technology. The high mobilities achieved in 2DEGs enabled the discovery of the integer and fractional quantum Hall effects and are exploited in high-el...

Full description

Saved in:
Bibliographic Details
Published in:MRS bulletin 2008-11, Vol.33 (11), p.1027-1034
Main Authors: Mannhart, J., Blank, D.H.A., Hwang, H.Y., Millis, A.J., Triscone, J.-M.
Format: Article
Language:English
Subjects:
Applied and Technical Physics
Characterization and Evaluation of Materials
Electronic structure
Energy Materials
High electron mobility transistors
Materials Engineering
Materials Science
Nanotechnology
Semiconductor devices
Superconductivity
Technical Feature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Two-dimensional electron gases (2DEGs) based on conventional semiconductors such as Si or GaAs have played a pivotal role in fundamental science and technology. The high mobilities achieved in 2DEGs enabled the discovery of the integer and fractional quantum Hall effects and are exploited in high-electron-mobility transistors. Recent work has shown that 2DEGs can also exist at oxide interfaces. These electron gases typically result from reconstruction of the complex electronic structure of the oxides, so that the electronic behavior of the interfaces can differ from the behavior of the bulk. Reports on magnetism and superconductivity in oxide 2DEGs illustrate their capability to encompass phenomena not shown by interfaces in conventional semiconductors. This article reviews the status and prospects of oxide 2DEGs.
ISSN:0883-7694
1938-1425
DOI:10.1557/mrs2008.222